photoelectric sensitivity meaning in English

光电灵敏度
光敏性

Examples

With the aid of baffle movement , a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time . the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films , which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure . such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films , and which are considered to induce the lower - energy electrons to participate in the photoemission
通过掩膜预处理和挡板转移技术的配合，利用真空沉积方法首次制备了内场助结构ag - o - cs光电发射薄膜。 ag - o - cs薄膜内场助光电发射特性测试结果表明，该方法能够有效地实现ag - o - cs薄膜体内电场的加载与表面电极的引出，薄膜光电灵敏度随内场偏压的增大而上升。 ag - o - cs薄膜在内场作用下的光电发射增强现象与薄膜体内能带结构变化低能电子参与光电发射等物理机制有关。
The pixel size of p + / n - well / p - sub structure is 100 umx 100 n m , fill factor is 77 . 6 % . it can obtain target information with illuminance intensity in the range of 0 . 011x ~ 98 , 0001x , and the sensor photoelectric sensitivity is 35v / lx ? s . when the method of changeable reset frequency double scanning is used , the photoelectric dynamic range can be 139 . 8db , which is high in the 0 . 6 um level cmos image sensors already reported
在对感光单元进行器件物理结构优化的研究中，通过采用深结深光电管结构，提高了传感器的感光响应，其中p m阶”衬底结构的传感器面积为100umx100urn ，感光面积百分比为77石，可对0刀98 ， 000lx照度的目标信号进行传感，感光灵敏度大于3sv ix ? s ，采用了变频两次扫描后，动态范围可达139

photoelectric sensitivity meaning in English

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